Journal
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
Volume 33, Issue -, Pages 103-109Publisher
ELSEVIER SCI LTD
DOI: 10.1016/j.mssp.2015.01.023
Keywords
Perovskite; Hole transport material; Solid state dye sensitized solar cells; Cesium tin iodide
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Funding
- Department of Science and Technology of India [SR/S3/ME/0017/2009]
- Solar Energy Research Institute for India and the United States (SERIIUS)
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In this work, we report synthesis and stability analysis of cesium tin iodide (CsSnI3) prepared through solid state and solution route methods for its application as a hole transport layer in dye sensitized solar cells (DSSC). Phase formation, chemical stability and degradation mechanism of CsSnI3 were studied using X-ray diffraction (XRD), Energy-dispersive X-ray spectroscopy (EDS), field emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), and Raman spectroscopy. Optical band gap of the material was studied using UV-vis spectroscopy and photoluminescence studies. CsSnI3 synthesized through solid state route was used as a hole transport material (HTM) for dye sensitized solar cells with cell efficiency up to 3%. Temperature dependent excitonic emission studies shows that B-gamma-CsSnI3 shows a linear increase in band gap with increasing temperature. (C) 2015 Elsevier Ltd. All rights reserved.
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