Journal
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
Volume 40, Issue -, Pages 817-821Publisher
ELSEVIER SCI LTD
DOI: 10.1016/j.mssp.2015.07.085
Keywords
Ruthenium silicide (Ru2Si3); XPS; Raman spectroscopy; TEM; Sputtering
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Funding
- Research Grants Council of the Hong Kong Special Administrative Region, China [PolyU 5316/09E]
- Research Committee of The Hong Kong Polytechnic University
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Ru2Si3 suicide was prepared in two different ways: (i) through a deposition (D) from a Ru2Si3 sputtering target and (ii) via a solid state reaction (SSR) of ruthenium thin filrri with silicon to form a rectifying structure silicide/silicon. Both types of silicides were treated at 700 degrees C in nitrogen ambient for 5 mm in order to facilitate crystallization and solid state reaction, respectively. Transmission electron microcopy (TEM), x-ray photoelectron spectroscopy (XPS) and Raman spectroscopy were applied to study structural, compositional and chemical properties of the two types of suicides. (C) 2015 Elsevier Ltd. All rights reserved.
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