Journal
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
Volume 30, Issue -, Pages 352-360Publisher
ELSEVIER SCI LTD
DOI: 10.1016/j.mssp.2014.10.010
Keywords
Thin films; Cerium oxide; Rapid thermal annealing; Heating rate; CAFM; PL
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Funding
- Region Basse-Normandie
- Syndicat Mixte du Cotentin
- Fonds Europeens de Developpement Regional (FEDER)
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The impact of the heating rate (HR) of a Rapid Thermal Annealing (RTA) on the crystallinity and on the morphology of CeO2 thin films has been investigated by Raman Spectroscopy (RS), Photoluminescence (PL), Scanning Electron Microscopy (SEM), Energy Dispersive Spectroscopy (EDS), and tapping mode Atomic Force Microscopy (PPM). The electrical properties of CeO2 thin films have also been studied with the Conductive AFM mode. This paper highlights the importance of the heating rate value used during an RTA on crystalline quality, morphology and on the electrical properties of the CeO2 layer. In fact, the best crystallinity with a good morphology and a high resistivity has been obtained for a CeO2 layer sputtered on (111) Si substrate and post-annealed at 1000 degrees C for 30s with an HR of 25 degrees C/s. (C) 2014 Elsevier Ltd. All rights reserved.
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