Journal
IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS
Volume 22, Issue 8, Pages 1841-1844Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TVLSI.2013.2278474
Keywords
Field Effect Transistors; semiconductors devices; tunneling
Funding
- [POSDRU/89/1.5/S/62557]
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The nothing-on-insulator (NOI) transistor was recently proposed and is based on the conduction through a vacuum nanocavity. The main contributions of this brief are: 1) the NOI device study on alternative materials and 2) New key device parameters. The simulations reveal optimum NOI structure with 15-nm film thicknesses, possessing a subthreshold drain slope of 50 mV/dec, I-ON/I-OFF ratio of 10(12), and a switching time under 0.3 ps. Although the NOI device is related to the tunnel or vacuum device as phenomena, it distinctly evolves toward a compact nanostructure, with the main advantage of nanometric sizes on all three directions, becoming interesting for very large-scale integration systems.
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