Journal
MATERIALS SCIENCE & ENGINEERING R-REPORTS
Volume 94, Issue -, Pages 1-56Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.mser.2015.05.001
Keywords
III-Nitrides; Dislocations; Deep traps; HEMT; LED; Device degradation
Funding
- Ministry of Education and Science of the Russian Federation [K2-2014-055]
- National Research Foundation of Korea (NRF) - Ministry of Science, ICT AMP
- Future Planning [2013R1A2A2A07067688, 2010-0019626]
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New developments in theoretical studies of defects and impurities in III-Nitrides as pertinent to compensation and recombination in these materials are discussed. New results on experimental studies on defect states of Si, O, Mg, C, Fe in GaN, InGaN, and AlGaN are surveyed. Deep electron and hole traps data reported for GaN and AlGaN are critically assessed. The role of deep defects in trapping in AlGaN/GaN, InAlN/GaN structures and transistors and in degradation of transistor parameters during electrical stress tests and after irradiation is discussed. The recent data on deep traps influence on luminescent efficiency and degradation of characteristics of III-Nitride light emitting devices and laser diodes are reviewed. (C) 2015 Elsevier B.V. All rights reserved.
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