Journal
IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING
Volume 23, Issue 3, Pages 429-441Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TSM.2010.2051730
Keywords
Backend dielectric breakdown; low-k dielectric; semiconductor reliability
Categories
Funding
- TSMC
- AMD
- Semiconductor Research Corporation [1376.001]
- National Science Foundation [0901576]
- Div Of Electrical, Commun & Cyber Sys
- Directorate For Engineering [0901576] Funding Source: National Science Foundation
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Backend dielectric breakdown is an increasingly important issue for advanced CMOS processes due to the use of progressively lower k dielectrics in the backend. This paper presents area-scaling formulas to enable full chip failure rate projection from test structure data. The area-scaling formulas are based on the negative binomial defect distribution, which in the limit is equivalent to models based on the Poisson distribution. Both the Weibull and log-normal distributions are considered for data characterization. The results are applied to data measured from backend comb structures, and reveals a low level of defect clustering.
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