Journal
IEEE TRANSACTIONS ON POWER ELECTRONICS
Volume 28, Issue 1, Pages 555-572Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TPEL.2012.2199131
Keywords
Harsh environment; high-temperature (HT) converter; silicon carbide JFET; silicon-on-insulator (SOI) technology
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Funding
- Rolls-Royce Corporation
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High-temperature (HT) converters have gained importance in industrial applications where the converters operate in a harsh environment, such as in hybrid electrical vehicles, aviation, and deep-earth petroleum exploration. These environments require the converter to have not only HT semiconductor devices (made of SiC or GaN), but also reliable HT packaging, HT gate drives, and HT control electronics. This paper describes a detailed design process for an HT SiC three-phase PWM rectifier that can operate at ambient temperatures above 100 degrees C. SiC HT planar structure packaging is designed for the main semiconductor devices, and an edge-triggeredHT gate drive is also proposed to drive the designed power module. The system is designed to make use of available HT components, including the passive components, silicon-on-insulator chips, and auxiliary components. Finally, a 1.4 kW lab prototype is tested in a harsh environment for verification.
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