Journal
IEEE TRANSACTIONS ON PLASMA SCIENCE
Volume 40, Issue 11, Pages 2900-2911Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TPS.2012.2212463
Keywords
Atmospheric-pressure plasma jet; modification; plasma etching; surface topology
Categories
Funding
- Federal Ministry of Education and Research (BMBF) of Germany [03Z2DN12, 13N11188]
- German Research Foundation (DFG) within the frame of the Research Unit FOR 1123
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An atmospheric-pressure argon plasma jet with varying admixtures of molecular oxygen was used to study the etching mechanism of poly(ether ether ketone) (PEEK). Furthermore, a correlation between plasma-based etching processes on PEEK with the generation of chemically reactive plasma species is proposed. The surface analysis was performed by X-ray photoelectron spectroscopy, atomic force microscopy, and surface profilometry which showed a dramatic increase in the content of oxygen functionalities and surface roughness after long-time Ar/O-2-plasma treatment. For the plasma diagnostics, two-photon absorption laser-induced fluorescence spectroscopy was applied. The obtained etching mass as well as the surface roughness for different molecular oxygen admixtures revealed a strong dependence on the atomic-oxygen density. Furthermore, the radial surface profile, affected by plasma etching, might be attributed to the distribution of plasma-generated oxygen species in the plasma jet effluent.
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