4.3 Article

Advances in High-Voltage Modulators for Applications in Pulsed Power and Plasma-Based Ion Implantation

Journal

IEEE TRANSACTIONS ON PLASMA SCIENCE
Volume 39, Issue 11, Pages 3033-3044

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TPS.2011.2157841

Keywords

Beam sources; modulators; plasma-based ion implantation (PBII) and deposition; power supply circuits; pulse generators

Funding

  1. Sao Paulo Research Foundation (FAPESP), SP-Brazil

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Modern pulsed power technology has its roots in the late 1950s and early 1960s, and it was driven overwhelmingly by applications in national defense carried out by several countries, especially the U.S., U.K., Russia, and China. The following decades, particularly the early 1990s, witnessed an increased interest in compact systems with pulse repetition rate that could be used in nondefense applications such as treatment of material surfaces by plasma and beam interactions, treatment of pollutants, food sterilization, medical applications, etc. This spawned a new generation of pulsed power components (solid-state switches) that led to completely solid-state modulators. This paper describes how the pulsed power technology used originally in beam sources and cathodic arcs has converged to produce power sources for plasma-based ion implantation (PBII) and related technologies. The present state of the art is reviewed, and prospects for future advances are described, especially for PBII.

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