Journal
IEEE TRANSACTIONS ON PLASMA SCIENCE
Volume 38, Issue 10, Pages 2888-2893Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TPS.2010.2063039
Keywords
Gallium arsenide (GaAs); gas discharge; photoconductive semiconductor switch (PCSS); spark gaps
Categories
Funding
- National Natural Science Foundation of China [50837005, 10876026]
- Foundation of the State Key Laboratory of Electrical Insulation for Power Equipment [EIPE09206]
- Natural Science Foundation of Shaanxi Province of China [2010JM7003]
- Foundation of Excellent Doctoral Dissertation of Xi'an University of Technology [105-210904]
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The operation of a pulse-charged spark gap that is triggered by gallium arsenide (GaAs) photoconductive semiconductor switches (PCSSs) was investigated. By measuring the currents with the streamer discharge, we analyzed the mechanisms of breakdown between the semi-insulating GaAs PCSS and the spark gap. Two similar combination setups were studied by different gap structures. It was shown that the PCSS was a good candidate for generating high current (as high as 5.6 kA) or ultrafast pulse with 220-ps rise time and 400-ps full-width at half-maximum accompanied with good reproducibilities of waveforms.
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