Journal
MATERIALS RESEARCH BULLETIN
Volume 64, Issue -, Pages 333-336Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.materresbull.2015.01.016
Keywords
Amorphous materials; Sputtering; X-ray diffraction; Transmission electron microscopy (TEM); Electrical properties
Categories
Funding
- Strategic Priority Research Program of the Chinese Academy of Sciences [XDA09020402]
- National Key Basic Research Program of China [2013CBA01900, 2011CBA00607, 2011CB932804]
- National Integrate Circuit Research Program of China [2009ZX02023-003]
- National Natural Science Foundation of China [61176122, 61106001, 61261160500, 61376006]
- Science and Technology Council of Shanghai [13ZR1447200, 13DZ2295700, 14DZ2294900]
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In this paper, Ni-doped Ge2Sb2Te5 (GST) was investigated for high speed phase change memory applications. Compared with GST, Ni0.3Ge2.8Sb2.2Te4.2 film exhibits a higher crystallization temperature (similar to 217 degrees C) and a better data retention ability (similar to 135 degrees C for 10 years). A reversible switching between set and reset can be realized by an electric pulse as short as 6-ns for Ni0.3Ge2.8Sb2.2Te4.7 based phase change memory. Furthermore, Ni0.3Ge2.8Sb2.2Te4.7 based cell shows good endurance up to 1.5 x 10(4) SET RESET cycles during endurance test. (C) 2015 Elsevier Ltd. All rights reserved.
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