Journal
MATERIALS RESEARCH BULLETIN
Volume 65, Issue -, Pages 175-182Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.materresbull.2015.01.053
Keywords
Magnetic materials; Nitrides; Epitaxial growth; Electrical properties
Categories
Funding
- National Natural Science Foundation of China [51171126]
- Key Project of Natural Science Foundation of Tianjin City [12JCZDJC27100, 14JCZDJC37800]
- Program for New Century Excellent Talents in University [NCET-13-0409]
- Scientific Research Foundation for the Returned Overseas Chinese Scholars, State Education Ministry of China
Ask authors/readers for more resources
negative anisotropic magnetoresistance that comes from the spin-down conduction electrons are observed in facing-target sputtered epitaxial gamma'-Fe4N films with different film thicknesses, substrates and orientations. Anisotropic magnetoresistance of gamma'-Fe4N films on LaAlO3(1 0 0) is larger than other substrates. The magnitude of anisotropic magnetoresistance in (1 0 0)-oriented films is always larger than (11 0)-oriented films. The anisotropic magnetoresistance is intimately related to the magnetocrystalline anisotropy. Fourier coefficient C-2 theta and C-4 theta of cos 2 theta and cos 4 theta terms strongly depend on the measuring temperature. No significant influence of magnetic field on C-2 theta and C-4 theta appears. The marked change of C-2 theta and appearance of C-4 theta at low temperatures are from crystal field splitting of d orbitals induced by the lattice change due to the tensile stress from substrate and the compressive stress from decreased temperatures. (C) 2015 Elsevier Ltd. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available