4.5 Article

Quantitative Investigation of Room-Temperature Breakdown Effects in Pixelated TlBr Detectors

Journal

IEEE TRANSACTIONS ON NUCLEAR SCIENCE
Volume 61, Issue 5, Pages 2573-2578

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TNS.2014.2348535

Keywords

Alternative room temperature semiconductor; TlBr spectrometers

Funding

  1. DHS DNDO (SBIR) through RMD [HSHQDC-12-C-00107]
  2. DOE through LLNL [DE-AC52-07NA27344]

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Due to favorable material properties such as high atomic number (Tl: 81, Br: 35), high density (g/cm(3)), and a wide band gap (2.68 eV), thallium-bromide (TlBr) is currently under investigation for use as an alternative room-temperature semiconductor gamma-ray spectrometer. TlBr detectors can achieve less than 1% FWHM energy resolution at 662 keV, but these results are limited to stable operation at -20 degrees C. After days to months of room-temperature operation, ionic conduction causes these devices to fail. This work correlates the varying leakage current with alpha-particle and gamma-ray spectroscopic performances at various operating temperatures. Depth-dependent photopeak centroids exhibit time-dependent transient behavior, which indicates trapping sites form near the anode surface during room-temperature operation. After refabrication, similar performance and functionality of failed detectors returned.

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