Journal
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
Volume 59, Issue 4, Pages 1559-1562Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TNS.2012.2200504
Keywords
Compound semiconductors; semiconductor radiation detectors; thallium bromide (TlBr)
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Thallium bromide chloride crystals TlBrxCl1-x have been evaluated as a material used for fabrication of room temperature radiation detectors. In this study, TlBrxCl1-x crystals with various chlorine (Cl) concentrations were grown by the travelling molten zone method and the detectors were fabricated from the crystals. The optical properties of the crystals were evaluated by measuring the transmittances. The charge transport properties were characterized by the Hecht analysis. The band gap energy of the crystals proportionally increased with Cl concentration. Mobility-lifetime products (mu tau) of the crystals decreased with increasing Cl concentration.
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