Journal
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
Volume 57, Issue 6, Pages 3101-3108Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TNS.2010.2085448
Keywords
Active pixel sensor (APS); CMOS image sensor (CIS); displacement damage; hot pixels; ionization; monolithic active pixel sensor (MAPS); non-ionizing energy loss (NIEL)
Funding
- EADS Astrium
- CNES
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Displacement damage effects due to proton and neutron irradiations of CMOS image sensors dedicated to imaging are presented through the analysis of the dark current behavior in pixel arrays and isolated photodiodes. The mean dark current increase and the dark current nonuniformity are investigated. Dark current histogram observations are compared to damage energy distributions based on GEANT 4 calculations. We also discuss, through annealing analysis, which defects could be responsible for the dark current in CMOS image sensors.
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