Journal
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
Volume 57, Issue 6, Pages 3493-3499Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TNS.2010.2086482
Keywords
Direct ionization; proton radiation effects; radiation effects; single-event effects; single event upset
Funding
- DARPA [HR0011-04-C-0106]
- Defense Threat Reduction Agency [HDTRA1-05-D-0001]
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We measure the sensitivity of different 90-nm SRAM cells to single-event upsets (SEUs) caused by heavy ions, high energy protons, and low energy protons. We discuss radiation hardened by design techniques that impact SEU sensitivity.
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