Related references
Note: Only part of the references are listed.The effects of hydrogen in hermetically sealed packages on the total dose and dose rate response of bipolar linear circuits
Ronald L. Pease et al.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE (2007)
Mechanisms of enhanced radiation-induced degradation due to excess molecular hydrogen in bipolar oxides
X. J. Chen et al.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE (2007)
Total dose and dose rate response of an AD590 temperature transducer
Ronald L. Pease et al.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE (2007)
Effects of device aging on microelectronics radiation response and reliability
D. M. Fleetwood et al.
MICROELECTRONICS RELIABILITY (2007)
Effects of water on the aging and radiation response of MOS devices
I. G. Batyrev et al.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE (2006)
Differences between charge trapping states in irradiated nano-crystalline HfO2 and non-crystalline Hf silicates
G. Lucovsky et al.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE (2006)
Total ionizing dose effects on triple-gate FETs
M. Gaillardin et al.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE (2006)
Nature of interface defect buildup in gated bipolar devices under low dose rate irradiation
X. J. Chen et al.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE (2006)
Elimination of enhanced low-dose-rate sensitivity in linear bipolar devices using silicon-carbide passivation
Marty R. Shaneyfelt et al.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE (2006)
Dose radiation effects in FinFETs
XS Wu et al.
SOLID-STATE ELECTRONICS (2006)
Bias-temperature instabilities and radiation effects in MOS devices
XJ Zhou et al.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE (2005)
Dose-rate sensitivity of modern nMOSFETs
SC Witczak et al.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE (2005)
The effects of aging on MOS irradiation and annealing response
MP Rodgers et al.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE (2005)
Total ionizing dose effects on deca-nanometer fully depleted SOI devices
P Paillet et al.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE (2005)
Effects of radiation and charge trapping on the reliability of high-κ gate dielectrics
JA Felix et al.
MICROELECTRONICS RELIABILITY (2004)
Effects of hydrogen motion on interface trap formation and annealing
SN Rashkeev et al.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE (2004)
Characterization of enhanced low dose rate sensitivity (ELDRS) effects using gated lateral PNP transistor structures
RL Pease et al.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE (2004)
Total dose effects on double gate fully depleted SOI MOSFETs
BG Jun et al.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE (2004)
Charge trapping and annealing in high-κ gate dielectrics
JA Felix et al.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE (2004)
Destructive single-event effects in semiconductor devices and ICs
FW Sexton
IEEE TRANSACTIONS ON NUCLEAR SCIENCE (2003)
Passivation layers for reduced total dose effects and ELDRS in linear bipolar devices
MR Shaneyfelt et al.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE (2003)
Total-dose radiation response of hafnium-silicate capacitors
JA Felix et al.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE (2002)
Long-term reliability degradation of ultrathin dielectric films due to heavy-ion irradiation
BK Choi et al.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE (2002)
Effects of hydrogen transport and reactions on microelectronics radiation response and reliability
DM Fleetwood
MICROELECTRONICS RELIABILITY (2002)
Observation of latent reliability degradation in ultrathin oxides after heavy-ion irradiation
JS Suehle et al.
APPLIED PHYSICS LETTERS (2002)
Reliability degradation of ultra-thin oxynitride and Al2O3 gate dielectric films owing to heavy-ion irradiation
BK Choi et al.
ELECTRONICS LETTERS (2002)
Heavy-ion-induced breakdown in ultra-thin gate oxides and high-k dielectrics
LW Massengill et al.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE (2001)
Radiation-induced leakage currents: Atomic scale mechanisms
PM Lenahan et al.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE (2001)
Aging and baking effects on the radiation hardness of MOS capacitors
AP Karmarkar et al.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE (2001)
Heavy-ion-induced soft breakdown of thin gate oxides
JF Conley et al.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE (2001)
Group IVB metal oxides high permittivity gate insulators deposited from anhydrous metal nitrates
TZ Ma et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2001)
High-κ gate dielectrics:: Current status and materials properties considerations
GD Wilk et al.
JOURNAL OF APPLIED PHYSICS (2001)
Thermal-stress effects and enhanced low dose rate sensitivity in linear bipolar ICs
MR Shaneyfelt et al.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE (2000)
Correlation between Co-60 and X-ray radiation-induced charge buildup in silicon-on-insulator buried oxides
JR Schwank et al.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE (2000)
Hole and electron trapping in ion implanted thermal oxides and SIMOX
BJ Mrstik et al.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE (2000)
Worst-case bias during total dose irradiation of SOI transistors
V Ferlet-Cavrois et al.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE (2000)
Heavy ion irradiation of thin gate oxides
M Ceschia et al.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE (2000)
New insights into fully-depleted SOI transistor response after total-dose irradiation
JR Schwank et al.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE (2000)
Low field leakage current and soft breakdown in ultra-thin gate oxides after heavy ions, electrons or X-ray irradiation
M Ceschia et al.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE (2000)
Electrical characteristics of highly reliable ultrathin hafnium oxide gate dielectric
L Kang et al.
IEEE ELECTRON DEVICE LETTERS (2000)
Share Paper
