Journal
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
Volume 55, Issue 3, Pages 1035-1041Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TNS.2007.913480
Keywords
LuAG : Ce; LuAG : Pr; LuYAP : Ce and LYSO : Ce single crystals; points defects and traps; scintillators
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Participation of shallow and deep traps in the processes of energy transfer and capture is studied by means of time-resolved emission ectroscopy and thermoluminescence in several groups of the Ce3+ and Pr3+-doped complex oxide single crystal scintillators. Tunnelling-driven recombination processes are distinguished in all the groups of examined materials: closely spaced electron and hole traps give rise to the t(-1) phosphorescence decays at low temperatures in the Ce-doped aluminum garnets and perovskites, while thermally assisted tunneling process is proposed to explain temperature independent trap depth in glow curve peaks within 50-250 degrees C in Ce-doped lutetium orthosilicates.
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