Growth and field emission of single-crystalline GaN nanowire with ropy morphology

Novel single-crystalline GaN nanowires with ropy morphology were synthesized by chemical vapor deposition (CVD) method using the reaction of Ga2O3 and ammonia. All nanowires have, exclusively three-dimensional ropy morphology with diameters ranging from 50 to 100 nm and lengths of tens micrometers, and are constructed from two three-dimensional helical GaN nanowires, which consist of single-crystalline hexagonal wurtzite structure grown with the [0 0 1] direction. The formation mechanism of this ropy nanowire structure is a vapor-liquid-solid (VLS) mechanism. The field emission property of the ropy GaN nanowire is similar to the helical GaN nanowire, which is sufficient for field emitter. This growth of the ropy GaN nanowire promotes novel and intriguing functional applications. (c) 2014 Elsevier B.V. All rights reserved.