Journal
IEEE TRANSACTIONS ON NANOTECHNOLOGY
Volume 13, Issue 2, Pages 274-282Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TNANO.2014.2299558
Keywords
Memory; memristor; sneak paths
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In this paper, we introduce for the first time, a closed-form solution for the memristor-based memory sneak paths without using any gating elements. The introduced technique fully eliminates the effect of sneak paths by reading the stored data using multiple access points and evaluating a simple addition/subtraction on the different readings. The new method requires fewer reading steps compared to previously reported techniques, and has a very small impact on the memory density. To verify the underlying theory, the proposed system is simulated using Synopsys HSPICE showing the ability to achieve a 100% sneak-path error-free memory. In addition, the effect of quantization bits on the system performance is studied.
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