Journal
IEEE TRANSACTIONS ON NANOTECHNOLOGY
Volume 12, Issue 2, Pages 263-269Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TNANO.2013.2243916
Keywords
Branched nanowires; CuO; heterojunction; photodetector (PD); ZnO
Categories
Funding
- Center for Micro/Nano Science and Technology
- Advanced Optoelectronic Technology Center, National Cheng Kung University under projects from the Ministry of Education, Taiwan
- Center for Condensed Matter Sciences, National Taiwan University
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The authors report the growth of ZnO branched nanowires on the CuO nanowires and the fabrication of p-CuO/n-ZnO heterojunction nanostructured photodetector (PD). It was found that the hydrothermally grown ZnO branched nanowires were reasonably uniform with an average length of 200 nm and an average diameter of 50 nm. Under forward bias, it was found that turn on voltage of the fabricated PD reduced from similar to 0.7 to similar to 0.2 V under ultraviolet (UV) illumination. It was also found that UV-to-visible rejection ratio of the fabricated device was larger than 100.
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