Journal
IEEE TRANSACTIONS ON NANOTECHNOLOGY
Volume 11, Issue 5, Pages 877-883Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TNANO.2012.2203826
Keywords
Bandwidth; doubler; graphene; quartz; radio frequency devices; transit frequency
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Funding
- NRI-SWAN, ONR
- DARPA through the CERA [FA8650-08-C-7838]
- DARPA through IBM-UT [W0853811]
- Laboratory Directed Research and Development program at Sandia National Laboratories
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We demonstrate a 500-nm graphene frequency doubler with a record 3-GHz bandwidth, exceeding the device transit frequency by 50%, a previously unobserved result in graphene, indicating that graphene multiplier devices might be useful beyond their transit frequency. The maximum conversion gain of graphene ambipolar frequency doublers is determined to approach a near lossless value in the quantum capacitance limit. In addition, the experimental performance of graphene transistor frequency detectors is demonstrated, showing responsivity of 25.2 mu A/mu W. The high-frequency performance of these gigahertz devices is enabled by top-gate device fabrication using synthesized graphene transferred onto low capacitance, atomically smooth quartz substrates, affording carrier mobilities as high as 5000 cm(2)/Vu.s.
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