Journal
IEEE TRANSACTIONS ON NANOTECHNOLOGY
Volume 10, Issue 2, Pages 344-351Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TNANO.2010.2041935
Keywords
Al2O3; atomic force microscopy (AFM); dielectric breakdown; electrical characterization; high-k
Categories
Funding
- Spanish Ministry of Science and Innovation [TEC2007-61294/MIC, HA2007-0029]
- Deutscher Akademischer Austausch Dienst
Ask authors/readers for more resources
In this paper, atomic force microscopy-based techniques have been used to study, at nanoscale, the dependence of the electrical properties of Al2O3 stacks for flash memories on the annealing temperature (T-A). The electrical characterization has been combined with other techniques (for example, transmission electron microscopy) that have allowed to investigate the dependence of the stack crystallization and the Si diffusion from the substrate to the gate oxide on T-A. The combination of both the analyses has allowed to explore if there is a relation between the percentage of diffused silicon and material crystallization with the conductivity and charge trapping of Al2O3 stacks.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available