Journal
IEEE TRANSACTIONS ON NANOTECHNOLOGY
Volume 9, Issue 5, Pages 640-646Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TNANO.2010.2054104
Keywords
Aluminum; crystal growth; piezoresistive devices; silicon; transducers
Categories
Funding
- National Science Foundation [ECS-0401148]
- Air Force Office of Scientific Research [FA9550-06-01-0413]
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Nanocrystalline piezoresistive polysilicon films were obtained at lowtemperatures by aluminum-induced crystallization (AIC). The films exhibited granular structure with good polycrystalline properties. A piezoresistive pressure sensor was fabricated on a polyimide substrate, in a Wheatstone bridge configuration comprising two passive resistors and two active piezoresistors made of polysilicon films obtained by AIC. The resistors showed linear I-V characteristics with typical resistance values between 15 and 30 k Omega. Atomic force microscopy was used in contact mode to study the response of the pressure sensor with applied pressure in the 2-19 kPa range. For the higher range of 450 kPa-2 MPa, a load-cell with a nanopositioner was utilized. The pressure-sensor sensitivity was measured to be 41.12 and 5.02 mV/MPa, respectively, for these ranges, when the Wheatstone bridge was bias at 1 V.
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