High-performance twin silicon nanowire MOSFET (TSNWFET) on bulk Si wafer

A gate-all-around (GAA) twin silicon nanowire MOSFET (TSNWFET) with 5-nm-radius channels on a bulk Si wafer is successfully fabricated to achieve extremely high-drive currents of 2.37 mA/mu m for n-channel and 1.30 mA/mu m for p-channel TSNWFETs with mid-gap TiN metal gate that are normalized by a nanowire diameter. It also shows good short-channel effects immunity down to 30-nm gate length due to the GAA structure and the nanowire channel. The effect of bottom parasitic transistor in TSNWFET is also investigated.