Journal
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
Volume 62, Issue 3, Pages 513-520Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TMTT.2014.2299769
Keywords
Bias condition; GaN HEMT; kink effect (KE); scattering parameter measurements; temperature
Categories
Funding
- PANREX project [PON 01_01322]
- Italian MIUR
- FWO-Vlaanderen
- Serbian Ministry for Education, Science and Technological Development [TR-32052]
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This paper, for the first time, analyzes in detail the kink phenomenon in S-22 as observed in GaN HEMT technology. To gain a comprehensive understanding, the kink effect (KE) is studied with respect to temperature and bias conditions. The achieved results clearly show that the dependence of the KE on the operating condition should be mainly ascribed to the transconductance, which plays a determinant role in the appearance of this effect. Furthermore, the analysis is extended to investigate the peak in the magnitude of h(21) showing its disappearance at low drain-source voltage, due to the increase of the intrinsic output conductance. The importance of this investigation originates from the fact that an accurate and complete characterization of these anomalous phenomena enables microwave engineers to properly take them into account during the modeling and design phases.
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