4.6 Article Proceedings Paper

A High-Power Broadband Passive Terahertz Frequency Doubler in CMOS

Journal

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
Volume 61, Issue 3, Pages 1150-1160

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TMTT.2013.2243465

Keywords

CMOS; conversion efficiency; frequency doubler; passive; ring structure; signal source; terahertz; varactor

Funding

  1. C2S2 Focus Center under the Focus Center Research Program (FCRP), a Semiconductor Research Corporation (SRC) entity
  2. National Science Foundation (NSF)
  3. Div Of Electrical, Commun & Cyber Sys
  4. Directorate For Engineering [0954537] Funding Source: National Science Foundation

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To realize a high-efficiency terahertz signal source, a varactor-based frequency-doubler topology is proposed. The structure is based on a compact partially coupled ring that simultaneously achieves isolation, matching, and harmonic filtering for both input and output signals at f(0) and 2f(0) The optimum varactor pumping/loading conditions for the highest conversion efficiency are also presented analytically along with intuitive circuit representations. Using the proposed circuit, a passive 480-GHz frequency doubler with a measured minimum conversion loss of 14.3 dB and an unsaturated output power of 0.23 mW is reported. Within 20-GHz range, the fluctuation of the measured output power is less than 1.5 dB, and the simulated 3-dB output bandwidth is 70 GHz (14.6%). The doubler is fabricated using 65-nm low-power bulk CMOS technology and consumes near zero dc power.

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