Journal
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
Volume 60, Issue 6, Pages 1676-1683Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TMTT.2012.2189243
Keywords
BiCMOS integrated circuits (ICs); current-reuse; electromagnetic (EM) simulations; millimeter-wave (mm-wave) circuits; power amplifier (PA); transformers
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This paper presents a pseudodifferential power amplifier for 77-GHz automotive radar. The circuit is fabricated in a SiGe HBT BiCMOS technology featuring bipolar transistors with f(T)/f(max) of 230/280 GHz. The amplifier adopts a transformer-coupling current-reuse approach to improve both gain and efficiency. An interstacked transformer is also profitably adopted to reduce output losses due to the differential-to-single-ended conversion. The amplifier exhibits a saturated power, a peak power-added efficiency, and a gain of 14.5 dBm, 9%, and 25 dB, respectively, thus achieving a first-rate figure-of-merit as high as 4755.
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