Journal
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
Volume 58, Issue 11, Pages 3336-3343Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TMTT.2010.2076630
Keywords
High power detectors; microwave photonics; linearity; photodiodes; silicon photonics
Categories
Funding
- Defense Advanced Research Projects Agency (DARPA) under the United States Air Force [FA8750-05-C-0265]
Ask authors/readers for more resources
We demonstrate high current operation of an evanescently coupled Ge waveguide n-i-p photodetector grown on top of a Si rib waveguide. A 7.4 mu m x 500 mdevice was found to dissipate 1.003 W of power (125.49 mA at -8 V). 2-D thermal simulations of the device show that the relatively high thermal conductivities of the intrinsic Ge region and the p(+) doped Si layer result in efficient heat transfer and hence, lower absorber temperatures when compared to a similar InP based waveguide photodiode. Additionally, to determine the feasibility of these devices for analog photonic applications, we performed large signal and small signal radio frequency (RF) measurements as well as linearity measurements. At 1 GHz and 40 mA of photocurrent, a third order output intercept point (OIP3) of 36.49 dBm is measured. The maximum RF power extracted at 1 GHz is 14.17 dBm at 60 mA of photocurrent and 7 V reverse bias.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available