4.6 Article

A Broadband 835-900-GHz Fundamental Balanced Mixer Based on Monolithic GaAs Membrane Schottky Diodes

Journal

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
Volume 58, Issue 7, Pages 1917-1924

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TMTT.2010.2050181

Keywords

Cryogenic test bench; fundamental balanced mixer (FBM); monolithic microwave integrated circuit (MMIC); passive cooling; planar Schottky diode; submillimeter wavelengths; vacuum chamber

Funding

  1. National Aeronautics and Space Administration (NASA)
  2. European Space Agency [ESTEC/RFQ/3- 12604/08/NKAFM]
  3. Oak Ridge Associated University under NASA

Ask authors/readers for more resources

The development of a 835-900-GHz biasable fundamental balanced mixer using planar GaAs Schottky diodes is presented. The monolithic microwave integrated circuit integrates two planar Schottky anodes in a balanced configuration, stripline filtering elements, and on-chip capacitor on a thin GaAs membrane. At 850 GHz, double side-band (DSB) mixer noise temperature of 2660 K and conversion loss of 9.25 dB are measured, respectively, at room temperature. When the mixer is cooled to 120 K, the DSB mixer noise temperature and conversion loss improve to 1910 K and 8.84 dB, respectively.

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.6
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

No Data Available
No Data Available