4.4 Article

Voltage Control of Two-Magnon Scattering in Multiferroic Layers for Tunable Magnetoelectric Devices

Journal

IEEE TRANSACTIONS ON MAGNETICS
Volume 54, Issue 11, Pages -

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TMAG.2018.2850064

Keywords

Ferromagnetic resonance (FMR); magnetoelectric (ME) coupling; multiferroic heterostructure; two-magnon scattering (TMS)

Funding

  1. National Natural Science Foundation of China [51472199, 11534015, 51602244]
  2. National 111 Project of China [B14040]
  3. Fundamental Research Funds for the Central Universities
  4. China Recruitment Program of Global Youth Experts

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In this paper, multiferroic heterostructures have been prepared by growing MnZn ferrite films on ferroelectric single substrates using pulsed laser deposition technology. An enhanced magnetoelectric coupling has been achieved at the critical two-magnon scattering (TMS) angles, where the ferromagnetic resonance field shifts -653 and 211 Oe. The contribution of TMS effects is much larger than that of the conventional strain effect. This heterostructure provides an alternative route for novel integrated multiferroic materials and devices.

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