4.4 Article

Defect-Induced Room-Temperature Ferromagnetism in SnO2 Nanowires Controlled by UV Light Irradiation

Journal

IEEE TRANSACTIONS ON MAGNETICS
Volume 50, Issue 5, Pages -

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TMAG.2013.2292575

Keywords

Oxygen vacancy; room-temperature ferromagnetism; SnO2 nanowires; UV light irradiation

Funding

  1. CSIR, Government of India

Ask authors/readers for more resources

Nonferromagnetic SnO2 nanowires show ferromagnetism at room temperature, which is significantly enhanced upon irradiation by ultraviolet (UV) light of wavelength 365 nm. The structural characterizations on as-grown, UV-irradiated, and O-2-annealed samples show no measurable difference in X-ray diffraction profiles and field-emission scanning and transmission electron microscopy images. But optical absorption, photoluminescence, and X-ray photoelectron spectroscopy reveal a significant effect of UV irradiation and establish a remarkable enhancement of O vacancies in SnO2 nanowires upon UV light irradiation, which diminishes after annealing in the presence of O-2 gas. The as-grown and O-2-annealed nanowires show weak ferromagnetism at room temperature, but the UV-irradiated nanowires show strong ferromagnetism. The origin of such ferromagnetism in pure (undoped) SnO2 is attributed to the presence of oxygen vacancies, which is tunable externally using UV irradiation.

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.4
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

No Data Available
No Data Available