Journal
IEEE TRANSACTIONS ON MAGNETICS
Volume 47, Issue 6, Pages 1567-1570Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TMAG.2010.2104137
Keywords
MgO barrier; sputtering condition; tunnel magnetoresistance
Funding
- JSPS
- MEXT
- Grants-in-Aid for Scientific Research [11J07400] Funding Source: KAKEN
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We investigated tunnel magnetoresistance (TMR) properties in double MgO-barrier magnetic tunnel junctions (DMTJs) with (Co25Fe75)(100-x)B-x free-layers with x = 15, 20, and 25 (in at.%) sputtered at different power. The TMR ratio of DMTJs increased with sputtering power, which is ascribed to the B composition reduction in the CoFeB free-layer with increasing sputtering power. The x-ray diffraction measurement showed that crystallization into (001)-oriented texture of CoFeB film sandwiched between the two MgO-layers as well as an improvement of (001) orientation of top MgO-barrier are realized. The TMR ratio over 200% was obtained in DMTJs with a (Co25Fe75)(85)B-15 free-layer sputtered at 0.88 and 1.77 W/cm(2)
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