Journal
IEEE TRANSACTIONS ON MAGNETICS
Volume 47, Issue 10, Pages 2447-2450Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TMAG.2011.2153189
Keywords
Co2FeAl0.5Si0.5; full-Heusler alloy; spin injection; spintronics
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We investigated the electrical transport properties in Co2FeAl0.5Si0.5 (CFAS)/GaAs junctions. From current density-voltage characteristics, the formation of a schottky tunnel barrier in the CFAS/GaAs interface was indicated. Moreover, junction resistance of 2 x 10(-9) Omega . m(2) which is adequate for high magnetoresistance ratio attributable to high spin injection efficiency was obtained. Comparing the bias dependencies of conductance with samples, which CFAS ordering is lower, indicated that L2(1) ordered CFAS contributes to electrical transport. Finally, the spin injection signal was observed with 3-terminal Hanle measurement, and spin relaxation time was estimated to be 380 ps at 5 K.
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