Journal
IEEE TRANSACTIONS ON MAGNETICS
Volume 46, Issue 6, Pages 1910-1913Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TMAG.2010.2041048
Keywords
Extraordinary magnetoresistance (EMR); graphene; magnetic sensors
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Graphene extraordinary magnetoresistance (EMR) devices have been fabricated and characterized in varying magnetic fields at room temperature. The atomic thickness, high carrier mobility and high current carrying capabilities of graphene are ideally suited for the detection of nanoscale sized magnetic domains. The device sensitivity can reach 10 mV/Oe, larger than state of the art InAs 2DEG devices of comparable size and can be tuned by the electric field effect via a back gate or by imposing a biasing magnetic field.
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