Journal
IEEE TRANSACTIONS ON MAGNETICS
Volume 44, Issue 11, Pages 3601-3604Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TMAG.2008.2001648
Keywords
Co/Pd; Co/Pt; MgO; perpendicular magnetic tunnel junction (pMTJ); tunneling magnetoresistance (TMR)
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In this study, the effects of annealing conditions on the magnetic characteristics of multilayered perpendicular magnetic tunnel junctions (pMTJ) of the structures SiNx/Pt/(Co/Pd)(10)/MgO/(Co/Pt)(5)/Pt with various MgO barrier thicknesses were explored. We found that both the fixed and free layers exhibit coercivity growth with increasing annealing temperature. Insertion of a 0.4 nm Mg layer under the MgO barrier layer increases the corecivities further. Magnetoresistance measured by the current-in-plane tunneling (CIPT) method reveals that the insertion of Mg layers on both side of the MgO layer can increase the MR ratio by up to 32%.
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