4.7 Article

Low-Power Die-Level Process Variation and Temperature Monitors for Yield Analysis and Optimization in Deep-Submicron CMOS

Journal

IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT
Volume 61, Issue 8, Pages 2212-2221

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TIM.2012.2184195

Keywords

Analog test; process variation monitoring; temperature monitors; yield enhancement

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This paper reports design, efficiency, and measurement results of the process variation and temperature monitors for yield analysis and enhancement in deep-submicron CMOS circuits. Additionally, to guide the verification process with the information obtained through monitoring, two efficient algorithms based on an expectation-maximization method and adjusted support vector machine classifier are proposed. The monitors and algorithms are evaluated on a prototype 12-bit analog-to-digital converter fabricated in standard single poly six-metal 90-nm CMOS.

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