4.6 Article

Evaluation of Point Field Sensing in IGBT Modules for High-Bandwidth Current Measurement

Journal

IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS
Volume 49, Issue 3, Pages 1430-1437

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TIA.2013.2252595

Keywords

Current measurement; giant magnetoresistance; integrated circuit packaging; magnetic sensors

Funding

  1. Fuji Electric Company, Ltd.
  2. Wisconsin Electric Machines and Power Electronics Consortium, University of Wisconsin, Madison

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This paper evaluates field-based current sensing integration in power electronic modules. Point field detectors, such as giant magnetoresistor detectors, can provide high-bandwidth (dc to megahertz) current measurements with a small footprint (1.26 mm(2)). Magnetic fields surrounding a current-carrying conductor are frequency dependent, so the 5% flat-bandwidth metric is used to evaluate placement of the point field detectors to maximize the bandwidth of the current measurement. A significant contribution of this paper is an evaluation of the placement of point field detectors inside a power switching module. This paper focuses on detector placement for the interconnect structures commonly found in power switching modules. Experimental and finite-element analysis of wire bond structures with multiple wire bonds and lead frame structures are evaluated for high-bandwidth sensing performance.

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