Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 65, Issue 11, Pages 5151-5156Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2018.2870115
Keywords
CMOS; quantum information; quantum bit (qubit); spins
Funding
- EU [688539]
- Marie Curie Fellowship through the Horizon 2020 Program
- French National Research Agency through Project IDEX UGA [ANR-15-IDEX-0002]
- CMOSQSPIN [ANR-17-CE24-0009]
- Agence Nationale de la Recherche (ANR) [ANR-15-IDEX-0002] Funding Source: Agence Nationale de la Recherche (ANR)
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We fabricated quantum dot devices using a standard SOI CMOS process flow and demonstrated that the spin of confined electrons could be controlled via a local electrical-field excitation, owing to intervalley spin-orbit coupling. We discuss that modulating the confinement geometry via an additional electrode may enable switching a quantum bit (qubit) between an electrically addressable valley configuration and a protected spin configuration. This proposed scheme bears relevance to improve the tradeoff between fast operations and slow decoherence for quantum computing on a Si qubit platform. Finally, we evoke the impact of process-induced variability on the operating bias range.
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