Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 65, Issue 10, Pages 4571-4576Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2018.2863207
Keywords
CMOS-SOI-NEMS; MOS transistors; mosaic; passive infrared (PIR) sensors; uncooled infrared (IR) sensors; voltage-current response
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This paper analyzes the performance of mosaic nonimaging passive infrared (PIR) sensors fabricated by the CMOS-SOI-MEMS technology. The elementary sensor, forming a subpixel, is a thermally isolated nanomachined CMOS transistor, dubbed TMOS, operating at subthreshold. The mosaic uncooled PIR sensors are composed of several TMOS subpixels, which are electrically connected, either in parallel or in series as well as a combination of both options. These mosaic sensors, which are manufactured by nanofabrication methods, exhibit enhanced performance and robust manufacturing on wafer level. The overall figures of merit of these sensors, which are modeled in this paper, indicate why they are most suitable for consumer electronics, including smart homes, wearables, Internet of Things as well as mobile applications.
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