Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 65, Issue 10, Pages 4109-4121Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2018.2867441
Keywords
2-D layered materials; 3-D integration; black phosphorus (BP); field-effect transistor (FET); graphene; hexagonal boron nitride (h-BN); inductor; intercalation; interconnect; loT; logic; low-frequency noise; memory; neuromorphic; scaling; sensor; synthesis; transition metal dichalcogenide (TMD); van der Waals heterostructures; very large scale integration (VLSI)
Funding
- AFOSR
- ARO
- DoE
- Intel Corporation
- JST
- Mentor Graphics
- NSF
- SRC
- UC Laboratory Fees
- MRPI Research Programs
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Since the discovery of graphene in 2004, which proved the existence of 2-D crystals in nature, layered materials also known as van der Waals solids have received extensive reexamination, especially in the single-layer and multilayer forms because of their van der Waals type structure and unique properties that not only benefit many existing electronic components but also enable novel device concepts and design architectures. Numerous research efforts have been invested in these materials, and enormous quantities of results have been generated during the past 14 years. This paper provides an overview of the key physics and technology issues along with the most promising nano-electronic applications of these materials and also identifies the challenges in this rapidly evolving field.
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