Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 65, Issue 11, Pages 5189-5194Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2018.2868081
Keywords
Filament; hydrogen; poisoning; resistive switching RAM; selectivity; sensor
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A novel hydrogen sensor has been developed by using an optimized 0.18-mu m resistive random access memory process with a Pt/Ta2O5/TaOx/TaN stack. This resistive hydrogen sensor (ReHsensor) conforms to the ISO26142 standard in which it exhibits exceptional sensing capabilities, including a short response time (about 20 s for 1 vol.% hydrogen gas), high sensitivity, wide hydrogen concentration detection range (up to 4 vol.%) in air and N-2 ambient, high gas selectivity (no reaction with CH4, CO, CH3OH, or CH3COCH3) and is immune to poisoning by SO2 and hexamethyl disiloxane. As it does not require a heater, the power consumption of the ReHsensor is very low, at 0.4 mW.
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