Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 61, Issue 8, Pages 3014-3017Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2014.2330504
Keywords
AlGaN/GaN; ferroelectric (FE); subthreshold swing (SS)
Funding
- National Science Council [NSC-102-2221-E-003-030-MY3, 102-2622-E-002-014]
- Nano-Facility Centers
- National Center for High-Performance Computing (NCHC)
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AlGaN/GaN-on-Si metal-oxide-semiconductor high-electron mobility transistors with integrated ferroelectric (FE) polarization gate-stacks improve the subthreshold swing (from 4 to 2 V/decade) and the peak transconductance (g(m)) (18.4% enhancement) using the negative capacitance (NC) effect. An I-Dlin with similar to 23% enhancement and a high overdrive voltage implies a higher d Psi/dV(g) at 2-D electron gas, due to NC with small V-DS. The channel conductance (g(d)) at almost zero V-DS exhibits a 33% enhancement due to internal voltage amplification. The polarization is experimentally established with the validity of FE gate-stack with NC characteristics.
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