Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 61, Issue 12, Pages 4192-4196Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2014.2362134
Keywords
Aqueous solution method; field emitters; Ga-doped ZnO; nanosheet
Funding
- Ministry of Science and Technology [103-2221-E-150-034]
- National Science Council of Taiwan [102-2221-E-150-046, 101-2221-E-150-043]
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In this paper, gallium (Ga)-doped ZnO nanosheets were fabricated successfully on a glass substrate by using aqueous solution method. It was found that the GaZnO nanosheets grown at room temperature were structurally uniform and well oriented with pure wurtzite structure. The turn-on fields of ZnO and GaZnO nanosheets were 5.9 and 4.67 V/mu m, and field enhancement factors (beta) were 1966 and 4037, respectively. The results indicate that Ga-doped ZnO nanosheets exhibit enhanced field emission (FE) properties and are a promising candidate in future FE-based device applications.
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