Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 61, Issue 9, Pages 3166-3171Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2014.2341274
Keywords
Analytic model; conductive-bridge resistive-switching random-access memory (CBRAM); filament growth
Funding
- National Basic Research Program of China (973 Program) [2011CBA00600]
- Semiconductor Research Corporation, Durham, NC, USA [2224.001]
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An analytical model for the forming process of conductive-bridge resistive-switching random-access memory is developed. The measurable forming time can be calculated using this model giving the biasing condition and is verified to be correct through comparison with the experimental data. The forming time has been shown to have multiple-slopes in exponential dependence on the applied voltage, in agreement with measurement. The model is based on the identification of three steps in the forming process: 1) metal oxidation at the anode; 2) cation migration toward the cathode; and 3) backward filament growth due to electroplating from the cathode. The accuracy of the model has also been established via numerical simulation.
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