Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 61, Issue 7, Pages 2570-2576Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2014.2325613
Keywords
Graphene; modeling; RF performance
Funding
- European Union through the FP7 STREP Project GRADE [317839]
- Italian Ministry of Education, University and Research through the Basic Research Investment Fund Project [RBFR10XQZ8]
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We examined the DC and RF performance of the graphene base transistor (GBT) in the ideal limit of unity common base current gain. To this purpose, we developed a model to calculate the current-voltage characteristics of GBTs with semiconductor or metal emitter taking into account space charge effects in the emitter-base and base-collector dielectrics that distort the potential profile and limit the upper value of f(T). Model predictions are compared with available experiments. We show that, in spite of space charge high current effects, optimized GBT designs still hold the promise to achieve intrinsic cutoff frequency in the terahertz region, provided that an appropriate set of dielectric and emitter materials is chosen.
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