Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 61, Issue 7, Pages 2432-2436Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2014.2323052
Keywords
Current filaments; EL2 level; gallium arsenide (GaAs); semiconductor
Funding
- National Basic Research Program of China (973 Program) [2014CB339800]
- National Natural Science Foundation of China [51377133, 51107099]
- Doctoral Fund of the Ministry of Education of China [20116118110014]
- Projects of International Cooperation of Shaanxi [2012KW-04]
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The current filament phenomena in high gain gallium arsenide (GaAs) photoconductive semiconductor switches (PCSS) always draw a significant influence on the lifetime of the devices. This paper presents a study on the influence of the current filament over the material properties and output characteristics of the GaAs PCSS. The working principle of the current filaments has been analyzed and it is shown that the performance of GaAs PCSS degrades due to the heating effects of the current filaments. It is observed that the heating effect of current filament reduces the dark resistivity of the GaAs material; furthermore, it gradually damages electrode of PCSS, leading to the breakdown of PCSS. This paper presents the relationship between the turn-ON process and damage of the PCSS.
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