Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 61, Issue 8, Pages 2970-2976Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2014.2327386
Keywords
AlGaN/GaN high electron mobility transistor (HEMT); AlGaN/GaN SBD; GaN smart power platform; lateral field-effect rectifier (L-FER); monolithic integration; on-chip temperature sensing; proportional-to-absolute-temperature (PTAT) voltage source
Funding
- General Research Fund, Hong Kong [611311]
- [ITS/122/09FP]
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On a GaN smart power integrated circuit (IC) platform, a highly linear (i.e., proportional to absolute temperature) temperature sensor IC is demonstrated for building voltage references as well as temperature compensation functional blocks. The circuit is designed based on the temperature-dependent characteristics of GaN-based peripheral devices (e.g., heterojunction Schottky barrier diode, enhancement-/depletion-mode high electron mobility transistors, and lateral field-effect rectifiers) that are monolithically integrated with high-voltage power devices. This monolithic integration scheme facilitates the design efforts in taking full advantages of GaN's superior capability to operate at high temperatures. Proper circuit operation was demonstrated at 275 degrees C.
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