Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 61, Issue 1, Pages 23-29Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2013.2290773
Keywords
Line-edge roughness (LER); mean-field Hubbard model; nonequilibrium Green's function (NEGF) formalism; single atom vacancy; substrate charged impurities; zigzag graphene nanoribbons (ZGNRs)
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In this paper, the effect of structural nonidealities on the electronic transport properties of ultranarrow zigzag graphene nanoribbons (ZGNRs) is systemically investigated for the first time, employing the nonorthogonal third nearest neighbor mean-field Hubbard model along with the nonequilibrium Green's function formalism. We have evaluated the influence of line-edge roughness, single atom vacancies, and substrate-induced potential fluctuations on the transport gap, ON- and OFF-state conductances, and the ON/OFF conductance ratio of 12-nm-length ultranarrow ZGNRs. The results reveal that while even moderate amounts of edge roughness lead to a nonuniform suppression of the transmission probability and increase the transport gap, the presence of single atom vacancies tends to decrease the induced transport gap. Furthermore, it is shown that the transport properties of ZGNRs are more robust against potential fluctuations compared with their armchair counterparts.
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