Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 60, Issue 11, Pages 3746-3752Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2013.2283525
Keywords
HEMTs; power devices; quantum well; semiconductor heterostructures; simulation and modeling
Funding
- European Commission Project CoMoN [218255]
Ask authors/readers for more resources
This paper presents physics-based compact models for the C-V and I-V characteristics of AlGaN/GaN HEMT devices. The contribution of only the first energy level in the triangular quantum well at the AlGaN/GaN interface (where most of the charge carriers of the 2-DEG channel reside) is considered, which resulted in an accurate and simple unified charge control model. Based on this, analytical models of the drain current, the gate charge, and the gate capacitances have been developed. The models cover all the different operating regimes of a device. The excellent agreements between the model and measured C-V and I-V characteristics of devices with different gate lengths have demonstrated the validity of the model.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available